RRH040P03TB1
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RRH040P03TB1 datasheet
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МаркировкаRRH040P03TB1
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ПроизводительRohm
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ОписаниеRohm RRH040P03TB1 Continuous Drain Current: 4 A Current - Continuous Drain (id) @ 25?° C: 4A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: - 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 3 S Gate Charge (qg) @ Vgs: 5.2nC @ 5V Input Capacitance (ciss) @ Vds: 480pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOP Power - Max: 2W Power Dissipation: 2 W Rds On (max) @ Id, Vgs: 75 mOhm @ 4A, 10V Resistance Drain-source Rds (on): 95 mOhms Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 2.5V @ 1mA Other Names: RRH040P03TB1TR
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Количество страниц6 шт.
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Форматы файлаHTML, PDF
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