SH8M2TB1
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
SH8M2TB1 datasheet
-
МаркировкаSH8M2TB1
-
ПроизводительRohm
-
ОписаниеRohm SH8M2TB1 Continuous Drain Current: 3.5 A Current - Continuous Drain (id) @ 25?° C: 3.5A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Standard Fet Type: N and P-Channel Forward Transconductance Gfs (max / Min): 2 S Gate Charge (qg) @ Vgs: 3.5nC @ 5V Input Capacitance (ciss) @ Vds: 140pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOP Power - Max: 2W Power Dissipation: 2 W Rds On (max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V Resistance Drain-source Rds (on): 107 mOhms Series: - Transistor Polarity: N and P-Channel Vgs(th) (max) @ Id: 2.5V @ 1mA Other Names: SH8M2TB1TR
-
Количество страниц4 шт.
-
Форматы файлаHTML, PDF
Где можно купить
Новости электроники
28.05.2024
27.05.2024
26.05.2024